SiC Substrate
Tlhaloso
Silicon carbide (SiC) ke motsoako oa binary oa Sehlopha sa IV-IV, ke eona feela motsoako o tsitsitseng o tiileng ho Sehlopha sa IV sa Periodic Table, Ke semiconductor ea bohlokoa.SiC e na le thepa e ntle ka ho fetisisa ea mocheso, mechine, lik'hemik'hale le tsa motlakase, tse etsang hore e be e 'ngoe ea lisebelisoa tse molemo ka ho fetisisa tsa ho etsa lisebelisoa tsa elektronike tse nang le mocheso o phahameng, maqhubu a phahameng le a matla a phahameng, SiC le eona e ka sebelisoa e le thepa ea substrate. bakeng sa li-diode tse hlahisang khanya e putsoa tse thehiloeng ho GaN.Hajoale, 4H-SiC ke lihlahisoa tse ka sehloohong 'marakeng,' me mofuta oa conductivity o arotsoe ka mofuta oa semi-insulating le mofuta oa N.
Thepa
| Ntho | 2 inch 4H N-mofuta | ||
| Diameter | 2inch (50.8mm) | ||
| Botenya | 350+/-25um | ||
| Boitloaelo | ho tloha ho 4.0˚ ho leba <1120> ± 0.5˚ | ||
| Maemo a Motheo a Flat | <1-100> ± 5° | ||
| Sekhahla sa Bobeli Boitloaelo | 90.0˚ CW ho tloha Primary Flat ± 5.0˚, Si Face up | ||
| Bolelele ba Phatlalatso ba Pele | 16 ± 2.0 | ||
| Bolelele ba Bokhabane ba Bobeli | 8 ± 2.0 | ||
| Kereiti | Sehlopha sa tlhahiso (P) | Sehlopha sa lipatlisiso (R) | Kereiti ya dummy (D) |
| Ho hanyetsa | 0.015~0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Boima ba Micropipe | ≤ 1 li-micropipe/cm² | ≤ 1 0micropipes/cm² | ≤ 30 micropipes/cm² |
| Bokhopo ba Sekaho | Ke sefahleho sa CMP Ra <0.5nm, C Face Ra <1 nm | Ha ho na, sebaka se ka sebelisoang > 75% | |
| TTV | <8 um | <10um | <15 um |
| Inamela | <±8 um | <±10um | <± 15um |
| Warp | <15 um | <20 um | <25 um |
| Mapetso | Ha ho letho | Bolelele ba kakaretso ≤ 3 mm | Bolelele ba kakaretso ≤10mm, |
| Mengwapo | ≤ Mengoallo e 3, e bokellaneng | ≤ Mengoallo e 5, e bokellaneng | ≤ Mengoallo e 10, e bokellaneng |
| Lipoleiti tsa Hex | boholo ba lipoleiti tse 6, | boholo ba lipoleiti tse 12, | Ha ho na, sebaka se ka sebelisoang > 75% |
| Libaka tsa Polytype | Ha ho letho | Kakaretso ≤ 5% | Kakaretso ≤ 10% |
| Tšoaetso | Ha ho letho | ||
